دیتاشیت BUK9Y19-75B,115
مشخصات دیتاشیت
| نام دیتاشیت |
BUK9Y19-75B,115
|
| حجم فایل |
55.428
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
14
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Nexperia BUK9Y19-75B,115
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
106W
-
Total Gate Charge (Qg@Vgs):
30nC@5V
-
Drain Source Voltage (Vdss):
75V
-
Input Capacitance (Ciss@Vds):
3096pF@25V
-
Continuous Drain Current (Id):
48.2A
-
Gate Threshold Voltage (Vgs(th)@Id):
2.15V@1mA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
18mΩ@20A,10V
-
Package:
SOT-669
-
Manufacturer:
Nexperia
